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| SSM3K7002F TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K7002F High-Speed Switching Applications Analog Switch Applications * * Small package Low ON-resistance : Ron = 3.3 (max) (@VGS = 4.5 V) 0.95 0.95 2.90.2 +0.5 2.5-0.3 +0.25 1.5-0.15 +0.1 0.4-0.05 3 0.3 Unit: mm : Ron = 3.2 (max) (@VGS = 5 V) : Ron = 3.0 (max) (@VGS = 10 V) 1 2 Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD Tch Tstg Rating 60 20 200 800 200 150 -55 to 150 Unit V V mA mW C C +0.2 1.1-0.1 +0.1 0.16-0.06 1.9 Drain power dissipation (Ta = 25C) Channel temperature Storage temperature range S-MINI JEDEC JEITA TOSHIBA 1.Gate 2.Source 3.Drain TO-236MOD SC-59 2-3F1F Weight: 0.012 g (typ.) Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cutoff current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS IDSS Vth Yfs Test Condition VGS = 20 V, VDS = 0 ID = 0.1 mA, VGS = 0 VDS = 60 V, VGS = 0 VDS = 10 V, ID = 0.25 mA VDS = 10 V, ID = 200 mA ID = 500 mA, VGS = 10 V Drain-source ON-resistance RDS (ON) ID = 100 mA, VGS = 5 V ID = 100 mA, VGS = 4.5 V Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on delay time Turn-off delay time Ciss Crss Coss td(on) td(off) VDD = 30 V , ID = 200 mA , VGS = 0 to 10 V VDS = 25 V, VGS = 0, f = 1 MHz Min 60 1.0 170 Typ 2.0 2.1 2.2 17 1.4 5.8 2.4 26 Max 10 1 2.5 3.0 3.2 3.3 pF pF pF ns Unit A V A V mS 0~0.1 4.0 40 1 2005-11-03 SSM3K7002F Switching Time Test Circuit (a) Test circuit 10 V 0 IN 50 0V RL VDD OUT (b) VIN 10 V 90 % 10 % 10 s VDD = 30 V < Duty = 1% VIN: tr, tf < 2 ns (Zout = 50 ) Common Source Ta = 25 C (c) VOUT VDD 10 % 90 % tr td(on) td(off) tf VDS (ON) Marking 3 Equivalent Circuit (top view) 3 NC 1 2 1 2 Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID= 0.25 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on). ) Take this into consideration when using the device. The recommended VGS voltage for turning on this product is 4.5 V or higher. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2005-11-03 SSM3K7002F ID - VDS 1000 900 800 D ra in C u rre n t ID (m A ) 700 600 500 400 300 200 100 0 0 0.5 1 1.5 Drain-Source Voltage VDS (V) 2 2.7 2.5 VGS = 2.3 V 0.01 0 1 Common Source Ta = 25 C 7 10 3.3 3.0 5 4.5 4.0 100 D ra in C u rre n t ID (m A ) 1000 Common Source VDS = 10 V ID - VGS 10 Ta = 100 C 1 25 C - 25 C 0.1 2 3 Gate-Source Voltage VGS (V) 4 5 5 D ra in -S o u rce O N -R e sista n ce R D S(O N ) ( ) RDS(ON) - ID Common Source Ta = 25 C 5 D ra in -S o u rce O N -R e sista n ce R D S(O N ) ( ) RDS(ON) - VGS Common Source ID = 100 mA 4 4 Ta = 100 C 3 VGS = 4.5 V 2 5.0 V 3 2 25 C 10 V 1 1 - 25 C 0 10 100 Drain Current ID (mA) 1000 0 0 2 4 6 Gate-Source Voltage VGS (V) 8 10 5 Common Source 4 D ra in -S o u rce O N -R e sista n ce R D S(O N ) ( ) RDS(ON) - Ta 2 Ga te Th re sh o ld V o lta g e V th (V ) 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -25 0 25 50 75 100 Ambient Temperature Ta (C) 125 150 -25 0 Vth - Ta Common Source ID = 0.25 mA VDS = 10 V VGS = 4.5 V , ID = 100 mA 3 2 5.0 V , 100 mA 10 V , 500 mA 1 0 25 50 75 100 Ambient Temperature Ta (C) 125 150 3 2005-11-03 SSM3K7002F |Yfs| - ID 1000 D ra in R e ve rse C u rre n t ID R (m A ) Fo rw a rd Tra n sfe r A d m itta n ce |Y fs| (m S ) Common source VDS = 10 V Ta = 25 C 1000 900 800 700 600 500 400 300 200 100 0 10 100 Drain Current ID (mA) 1000 0 -0.2 S G IDR - VDS Common Source VGS = 0 V Ta = 25 C D IDR 100 10 -0.4 -0.6 -0.8 -1 Drain-Source Voltage VDS (V) -1.2 -1.4 100 C - VDS Common Source VGS = 0 V f = 1 MHz Ta = 25 C Ciss Coss 10000 t - ID Common Source VDD = 30 V VGS = 0 to 10 V Ta = 25 C S w itch in g Tim e t (n s) C a p a cita n ce C (p F) 1000 tf 10 100 td(off) 10 td(on) tr Crss 1 0.1 1 10 Drain-Source Voltage VDS (V) 100 1 1 10 100 Drain Current ID (mA) 1000 PD - Ta 250 D ra in P o w e r D issip a tio n P D (m W ) 200 150 100 50 0 0 20 40 60 80 100 120 Ambient Temperature Ta (C) 140 160 4 2005-11-03 SSM3K7002F 5 2005-11-03 |
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